AM1214-325
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RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER ...
AM1214-325
. . . . . . . .
RF & MICROWAVE
TRANSISTORS L-BAND RADAR APPLICATIONS
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 325 W MIN. WITH 6.4 dB GAIN
.400 x .500 2LFL (S038) hermetically sealed ORDER CODE AM1214-325 BRANDING 1214-325
PIN CONNECTION DESCRIPTION The AM1214-325 device is a high power
transistor specifically designed for L-Band radar pulsed output and driver applications. This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 VSWR at rated RF conditions. Low RF thermal resistance and computerized automatic wire bonding techniques ensure high reliability and product consistency. The AM1214-325 is supplied in the BIGPAC™ Hermetic M etal/Ceramic package with i nternal Input/Output matching structures. ABSOLUTE MAXIMUM RATINGS (T case
Symbol 1. Collector 2. Base 3. Emitter 4. Base
=
25 ° C)
Value Unit
Parameter
PDISS IC VCC TJ T STG
Power Dissipation* Device Current*
(TC ≤ 100°C)
1250 25 45 250 − 65 to +200
W A V °C °C
Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 0.10 °C/W
*Applies only to rated RF amplifier operation
September 1992
1/4
AM1214-325
ELECTRICAL SPECIFICATIONS (Tcase STATIC
Symbol Test Conditions Valu e Min. Typ. Max. Unit
= 25 °C)
...
