AM1011-300
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLAST...
AM1011-300
RF & MICROWAVE
TRANSISTORS AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTING LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE
POUT = 325 W MIN. WITH 7.7 dB GAIN
1030/1090 MHZ OPERATION
.400 x .600 2LFL (M207) hermetically sealed
O RDER CODE AM1011-300
BRANDING AM1011-300
PIN CONNECTION
DE SC RI P TI O N
The AM1011-300 is a rugged, Class C common base device specifically designed for new ModeS interrogator and transponder applications.
Minimal amplitude droop over the heavy Mode-S pulse burst is guarante ed by a thermal design incorporating an overlay site-ballasted die geometry.
1. Collector 2. Base
3. Emitter 4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Sy mb o l
PD IS S IC VCC TJ
TSTG
Parameter
Power Dissipation Device Current*
(TC ≤100°C)*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF operation)
Storage Temperature
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation.
Va l u e
1070 36 43
+250 − 65 to +200
Unit
W A V °C °C
0.14
°C/W
December 9, 1997
1/5
AM1011-300
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb ol
BVCBO BVCES BVEBO
ICES hFE
IC = 75 mA IC = 75 mA IC = 25 mA VCE = 40 V VCE = 5 V
Test Conditions
IE = 0 mA VBE = 0 V IC = 0 mA VBE = 0 V IC = 10 A
Min.
65 65 3.0 — 10
Va l u e T yp.
— — — — —
Max.
— — — 30 —
Unit
V V V mA —
DYNAMIC
S ymb ol
T est Co nditi ons
POUT f ...
