ASAT10

ASAT10 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI ASAT10 is Designed for PACKAGE STYLE .250 2L FLG(A) .020 x 45° A Ø .130 NOM. .050 x 45° FEATURES: Input Matching Network Omnigold™ Metalization System D C L B M F E G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O H I J K 2.3 A DIM MINIMUM inches / mm MAXIMUM inches / mm 45 V 15 V 3.5 V 29 W @ TC = 25 C -65 C to +200 C -65 OC to +150 OC 6.0 OC/W O A B C D E F G H I J K L M .055 / 1.40 .124 / 3.15 .243 / 6.17 .635 / 16.13 .555 / 14.10 .739 / 18.77 .315 / 8.00 .002 / 0.05 .055 / 1.40 .075 / 1.91 .245 / 6.22 .092 / 2.34 .065 / 1.65 .253 / 6.43 .665 / 16.89 .565 / 14.35 .749 / 19.02 .325 / 8.26 .006 / 0.15 .065 / 1.65 .095 / 2.41 .190 / 4.83 .255 / 6.48 O O ORDER CODE: ASI10517 CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO hFE COB PG ηC TC = 25 C NONETEST CONDITIONS IC = 3.0 mA IC = 3.0 mA IE = 3.0 mA VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 10 W IC = 600 mA f = 1.0 MHz f = 1.65 GHz MINIMUM TYPICAL MAXIMUM 45 12 3.5 15 150 7.0 11 45 UNITS V V V --pF dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...