Document
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510
FAST RECOVERY DIODE
ARF674
Repetitive voltage up to Mean forward current Surge current 4500 V 945 A 15 kA
FINAL SPECIFICATION
feb 97 - ISSUE : 03
Symbol
Characteristic
Conditions
Tj [°C]
Value
Unit
BLOCKING
V V I
RRM RSM RRM
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM
125 125 125
4500 4600 80
V V mA
CONDUCTING
I I I
F (AV)
Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1570 A 125
945 940 15 1125 x1E3 25 125 125 3 1.90 0.700
A A kA A²s V V mohm
F (AV) FSM
I² t V V r
FM F(TO) F
SWITCHING
t rr Q rr I rr s V
FR
Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery
IF= di/dt= VR =
500 A 30 A/µs 100 V 125
8 600 150 0.4
µs µC A
di/dt=
400 A/µs
42
V
MOUNTING
R th(j-h) T F
j
Thermal impedance Operating junction temperature Mounting force Mass
Junction to heatsink, double side cooled
21 -30 / 125 22.0 / 24.5 520
°C/kW °C kN g
ORDERING INFORMATION : ARF674 S 45 standard specification
VRRM/100
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
DISSIPATION CHARACTERISTICS SQUARE WAVE
3500
DC 180° 120° 90°
3000
DC
Power Dissipation [W]
2500
30°
60°
2000
1500
1000
500
0 0 200 400 600 800 1000 1200 1400
Mean Forward Current [A]
SINE WAVE
3500
180° 120°
3000
60°
90°
DC
Power Dissipation [W]
2500
30°
2000
1500
1000
500
0 0 200 400 600 800 1000 1200 1400
Mean Forward Current [A]
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
SWITCHING CHARACTERISTICS
FORWARD RECOVERY VOLTAGE
80 70
Tj = 125 °C
60 50 VFR [V] 40 30 20 10 0 0 200 400 600 di/dt [A/µs] 800 1000 1200
Tj = 25 °C
IF VFR
VF
REVERSE RECOVERY CHARGE Tj = 125 °C
REVERSE RECOVERY CURRENT Tj = 125 °C
3500
1000 A
1200
1000 A
3000 2500 Qrr [µC] 2000 1500
250 A 500 A
1000
500 A
800 Irr [A]
250 A
600
400
1000 500 0 0 100 di/dt 200 [A/µs] 300 400 200
0 0 100 200 di/dt [A/µs] 300 400
ta = Irr / (di/dt)
tb = trr - ta
IF
d i/d t ta tb
Softness (s factor) s = tb / ta
25% di Irr
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
Irr
Vr
ARF674 FAST RECOVERY DIODE
FINAL SPECIFICATION feb 97 - ISSUE : 03
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
FORWARD CHARACTERISTIC Tj = 125 °C
SURGE CHARACTERISTIC Tj = 125 °C
3000 2500 Forward Current [A] 2000 ITSM [kA] .