ARF673

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION mar 03 - ISSUE : 2 ARF673 Repetitive voltage up to Mean forward current Surge current 4500 V 990 A 15 kA Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 125 125 125 125 4500 4600 80 2500 V V mA V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = =2500 A 125 990 1030 15 1125 x1E3 125 125 125 3.82 1.70 0.850 A A kA A²s V V mohm I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr s E V OFF FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery IF= di/dt= VR = 2100 A 1100 A/µs 1800 V 125 2300 1300 1 6 µs µC A J V di/dt= 400 A/µs 125 38 MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance Ther...