FAST RECOVERY DIODE
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +3...
Description
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION
mar 03 - ISSUE : 2
ARF672
Repetitive voltage up to Mean forward current Surge current 4500 V 935 A 15 kA
Symbol
Characteristic
Conditions
Tj [°C]
Value
Unit
BLOCKING
V V I V
RRM RSM RRM DC LINK
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM
125 125 125 125
4500 4600 80 2500
V V mA V
CONDUCTING
I I I
F (AV) F (AV) FSM
Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = =2500 A 125
935 970 15 1125 x1E3 125 125 125 4.18 1.80 0.950
A A kA A²s V V mohm
I² t V V r
FM F(TO) F
SWITCHING
t rr Q rr I rr s E V
OFF FR
Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery
IF= di/dt= VR =
2100 A 1100 A/µs 1800 V 125 1600 1100 0.5 5.5
µs µC A
J V
di/dt=
400 A/µs
125
38
MOUNTING
R th(j-h) R th(c-h) T F
j
Thermal impedance T...
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