ARF670

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510 FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION dic 02 - ISSUE : 01 ARF670 Repetitive voltage up to Mean forward current Surge current 4500 V 1315 A 15 kA Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I V RRM RSM RRM DC LINK Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM 140 140 140 140 4500 4600 150 2500 V V mA V CONDUCTING I I I F (AV) F (AV) FSM Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1570 A 140 1315 1370 15 1125 x1E3 25 140 140 2.70 1.50 0.60 A A kA A²s V V mohm I² t V V r FM F(TO) F SWITCHING Q rr I rr Q rr I rr V pk s E V OFF FR Reverse recovery charge Peak reverse recovery current Reverse recovery charge Peak reverse recovery current Peak reverse recovery voltage Softness (s-factor), min Turn off energy dissipation Peak forward recovery voltage IF= VR = IF= VR = L= 1000 A 100 V 1000 A 350 V 1 µH di/dt= 250 A/µs 140 1...