FAST RECOVERY DIODE
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +3...
Description
POSEICO
POSEICO SPA POwer SEmiconductors Italian COrporation
POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. +39 010 6556234 - Fax +39 010 6557519 Sales Office: Tel. +39 010 6556775 - Fax +39 010 6442510
FAST RECOVERY DIODE
FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY TARGET SPECIFICATION
gen 03 - ISSUE : 1
ARF664
Repetitive voltage up to Mean forward current Surge current 3300 V 1000 A 18 kA
Symbol
Characteristic
Conditions
Tj [°C]
Value
Unit
BLOCKING
V V I V
RRM RSM RRM DC LINK
Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current Permanent DC voltage V=VRRM
125 125 125 125
3300 3400
V V mA
1500
V
CONDUCTING
I I I
F (AV) F (AV) FSM
Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance
180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM Forward current = 1570 A 125
1000 1025 18 1620 x1E3 25 125 125 3.55 1.80 0.70
A A kA A²s V V mohm
I² t V V r
FM F(TO) F
SWITCHING
Q rr I rr t rr Q rr I rr s E V
OFF FR
Reverse recovery charge Peak reverse recovery current Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Turn off energy dissipation Peak forward recovery
IF= VR = IF= di/dt= VR =
1000 A 100 V 1100 A 500 A/µs V
di/dt=
250 A/µs
125 125
µC A µs 2000...
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