ARF526

ANSALDO Ansaldo Trasporti s.p.a. Unita' Semiconduttori Via N. Lorenzi 8 - I 16152 GENOVA - ITALY Tel. int. +39/(0)10 6556549 - (0)10 6556488 Fax Int. +39/(0)10 6442510 Tx 270318 ANSUSE I - FAST RECOVERY DIODE ARF526 Repetitive voltage up to Mean forward current Surge current 1600 V 1345 A 20 kA TARGET SPECIFICATION feb 97 - ISSUE : 02 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V RRM V RSM I RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 125 125 125 1600 1700 50 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° square,50 Hz,Th=55°C,double side cooled Sine wave, 10 ms reapplied reverse voltage up to 50% VRSM 125 1345 1350 20 2000 x1E3 A A kA A²s V V mohm F (AV) FSM I² t V FM V F(TO) r F Forward current = 2000 A 125 125 125 1.6 1.00 0.300 SWITCHING t rr Q rr I rr s V FR Reverse recovery time Reverse recovery charge Peak reverse recovery current Softness (s-factor), min Peak forward recovery di/dt= 100 A/µs 125 I F = 1000 A di/dt= VR = 100 A/µs 50 V 145 0.5 15 V A 125 3.5 250 µs µC MOUNTING R th(j-h) T F j Thermal impedance Operating junction temperature Mounting force Mass Junction to heatsink, double side cooled 26 -30 / 125 18.0 / 20.0 500 °C/kW °C kN g ORDERING INFORMATION : ARF526 S 16 standard specificati...