ARF464B

D G S TO-247 ARF464A ARF464B Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been optimized for both linear and high efficiency classes of operation. Specified 65 Volt, 81.36 MHz Characteristics: Output Power = 100 Watts. Gain = 13dB (Class AB) Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RqJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Low Cost Common Source RF Package. Low Vth thermal coefficient. Low Thermal Resistance. Optimized SOA for Superior Ruggedness. Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. P E R 1 M I L A IN All Ratings: TC = 25°C unless otherwise specified. ARF464A/B UNIT Volts Y R 200 200 15 ±30 180 0.70 -55 to 150 300 Amps Volts Watts °C/W °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 µA) On State Drain Voltage (I D(ON) = 7.5A, VGS = 10V) MIN TYP MAX UNIT Volts 200 3.0 25 µA Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 V...