AR649S25

POSEICO POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510 RECTIFIER DIODE AR649 Repetitive voltage up to Mean forward current Surge current 2500 V 4645 A 45 kA TARGET SPECIFICATION nov 02 - ISSUE : 03 Symbol Characteristic Conditions Tj [°C] Value Unit BLOCKING V V I RRM RSM RRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak reverse current V=VRRM 175 175 175 2500 2600 100 V V mA CONDUCTING I I I F (AV) Mean forward current Mean forward current Surge forward current I² t Forward voltage Threshold voltage Forward slope resistance 180° sin ,50 Hz, Th=55°C, double side cooled 180° sin ,50 Hz, Tc=85°C, double side cooled Sine wave, 10 ms without reverse voltage Forward current = 2000 A 175 4645 4515 45 10125 x 1E3 175 175 175 0.90 0.70 0.100 A A kA A²s V V mohm F (AV) FSM I² t V V r FM F(TO) F SWITCHING t rr Q rr I rr Reverse recovery time Reverse recovery charge Peak reverse recovery current 175 µs µC A MOUNTING R th(j-h) R th(c-h) T F j Thermal impedance, DC Thermal impedance Operating junction temperature Mounting force Mass ORDERING INFORMATION : AR649 S 25 standard specification Junction to heatsink, double side cooled Case to heatsink, double side cooled 14 3 -30 / 35.0 850 175 / 40.0 °C/kW °C/kW °C kN g VRRM/100 AR649 RECTIFIER DIODE TARGET SPECIFI...