A1015

UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High hFE linearity *Complement to 2SC1815 1 TO-92 1:EMITTER 2:COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified ) PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector dissipation Collector current Base current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Pc Ic IB Tj TSTG RATING -50 -50 -5 400 -150 -50 125 -65 ~ +150 UNIT V V V mW mA mA °C °C ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain(note) Collector-emitter saturation voltage Base-emitter saturation voltage Current gain bandwidth product Output capacitance Noise Figure SYMBOL BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob NF TEST CONDITIONS Ic=-100µA,IE=0 Ic=-10mA,IB=0 IE=-10µA,Ic=0 VCB=-50V,IE=0 VEB=-5V,Ic=0 VCE=-6V,Ic=-2mA VCE=-6V,Ic=-150mA Ic=-100mA,IB=-10mA Ic=-100mA,IB=-10mA VCE=-10V,Ic=-1mA VCB=-10V,IE=0,f=1MHz Ic=-0.1mA,VCE=-6V RG=1kΩ,f=100Hz MIN -50 -50 -5 TYP MAX UNIT V V V nA nA 70 25 -0.1 80 4.0 0.5 -100 -100 400 -0.3 -1.1 7.0 6 V V MHz pF dB UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R201-004,A UTC 2SA1015 RANK RANGE PNP EPITAXIAL SILICON TR...