ACS03MS

ACS03MS January 1996 Radiation Hardened Quad 2-Input NAND Gate with Open Drain Features Pinouts Devices QML Qualified in Accordance with MIL-PRF-38535 Detailed Electrical and Screening Requirements are Contained in SMD# 5962-96703 and Intersil’s QM Plan 1.25 Micron Radiation Hardened SOS CMOS Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300K RAD (Si) Single Event Upset (SEU) Immunity: <1 x 10-10 Errors/Bit/Day (Typ) SEU LET Threshold . . . . . . . . . . . . . . . . . . . . . . . >100 MEV-cm2/mg Dose Rate Upset . . . . . . . . . . . . . . . . >1011 RAD (Si)/s, 20ns Pulse Dose Rate Survivability . . . . . . . . . . . >1012 RAD (Si)/s, 20ns Pulse Latch-Up Free Under Any Conditions Military Temperature Range . . . . . . . . . . . . . . . . . . -55oC to +125oC 14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3...