AA032P1-00

30–36 GHz GaAs MMIC Power Amplifier AA032P1-00 Features 2.415 1.929 1.099 0.597 0.000 0.000 0.120 0.107 1.143 2.179 2.285 1.937 1.099 0.597 I Single Gate and Drain Biases I 25 dBm Typical P1 dB Output Power at 31 GHz I 11 dB Typical Small Signal Gain I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.143 Description Alpha’s two-stage reactively-matched Ka band GaAs MMIC power amplifier has a typical P1 dB of 25 dBm with 10 dB associated gain and 15% power added efficiency at 31 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate solder or epoxy die attach processes. Single gate and drain bias pads cover both stages, with the added convenience that the chip can be wire bonded from either side for either bias. All chips are screened for gain, output power, efficiency and Sparameters prior to shipment for guaranteed performance. A broad range of applications exist in both the military and commercial areas where high power and gain are required. 2.166 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) S...