AA028N1-00

24–30 GHz GaAs MMIC Low Noise Amplifier AA028N1-00 Features s Single Bias Supply Operation (4.5 V) s 3.0 dB Typical Noise Figure at 28 GHz 1.250 Chip Outline 1.084 1.605 1.829 2.091 2.245 s 17 dB Typical Small Signal Gain s 0.25 µm Ti/Pd/Au Gates s 100% On-Wafer RF, DC and Noise Figure Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 1.162 1.172 0.530 0.087 0.124 0.000 0.000 0.235 1.056 1.957 2.268 2.355 Description Alpha’s three-stage reactively-matched 24–30 GHz MMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.0 dB at 28 GHz. The chip uses Alpha’s proven 0.25 µm low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 6 VDC 10 dBm 175°C Electrical Specifications at 25°C (VDS = 4.5 V) Parameter Drain Current Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression1 Thermal Resistance2 1. Not m...