AA022P1-00

18–23 GHz GaAs MMIC Power Amplifier AA022P1-00 Features I Single Bias Supply Operation (6 V) I 14 dB Typical Small Signal Gain I 24.5 dBm Typical P1 dB Output Power at 23 GHz I 0.25 µm Ti/Pd/Au Gates I 100% On-Wafer RF and DC Testing I 100% Visual Inspection to MIL-STD-883 MT 2010 Chip Outline 1.700 1.613 1.371 0.086 0.000 0.000 0.520 2.784 3.400 0.329 Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Description Alpha’s two-stage balanced K band GaAs MMIC power amplifier has a typical P1 dB of 24.5 dBm with 13 dB associated gain and 11% power added efficiency at 23 GHz. The chip uses Alpha’s proven 0.25 µm MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for small signal S-parameters and power characteristics prior to shipment for guaranteed performance. A broad range of applications exist in both the high reliability and commercial areas where high power and gain are required. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55°C to +90°C -65°C to +150°C 7 VDC 22 dBm 175°C Electrical Specifications at...