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1N23WE

Advanced Semiconductor
Part Number 1N23WE
Manufacturer Advanced Semiconductor
Description SILICON MIXER DIODE
Published Mar 23, 2005
Detailed Description 1N23WE SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating Fro...
Datasheet PDF File 1N23WE PDF File

1N23WE
1N23WE

Overview
1N23WE SILICON MIXER DIODE DESCRIPTION: The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.
0 to 12.
4 GHz.
PACKAGE STYLE DO- 23 FEATURES: • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA 1.
0 V 5.
0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C O O O NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω TC = 25 C O TEST CONDITIONS F = 9375 MHz RL = 100 Ω Plo = 1.
0 mW IF = 30 MHz NFif = 1.
5 dB MINIMUM TYPICAL MAXIM 7.
5 1.
3 UNITS dB f = 1000 Hz 335 8.
0 465 12.
4 Ω GHz A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818)...


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