1891-03

SD1893-03 RF & MICROWAVE TRANSISTORS 1.6 GHZ SATCOM APPLICATIONS . . . . . . . 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY GOLD METALLIZATION HIGH RELIABILITY AND RUGGEDNESS P OUT = 10 W MIN. WITH 11.0 dB GAIN COMMON BASE .230 2LFL (M151) hermetically sealed ORDER CODE SD1893-03 BRANDING 1893-3 PIN CONNECTION DESCRIPTION The SD1893-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. The device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 45 15 3.5 4.4 43 +200 − 65 to +200 V V V A W °C °C THERMAL DATA RTH(j-c) November 1992 Junction-Case Thermal Resistance 5.5 °C/W 1/5 SD1893-03 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO I CBO hFE IC = 3mA IE = 3mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA IE = 0mA IC = 300mA 45 3.5 — 15 — — — — — — 5 150 V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP ηc COB f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz f = 1 MHz PIN = 0.6 W PIN = 0.6 W PIN = 0.6 W VCB = 28 V VCE = 28 V VCE = 28 V VCE = 28 V 10 11 45 — — — — 19 — — — — W dB % pF 2/5 SD1893-03 IM...