1893-03

SD1891-03 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . . . . 1.65 GHz 28 VOLTS GOLD METALLIZED SYSTEM POLYSILICON SITE BALLASTING OVERLAY DIE GEOMETRY HIGH RELIABILITY AND RUGGEDNESS P OUT = 5.0 W MIN. WITH 14.0 dB GAIN .230 2LFL (M151) hermetically sealed ORDER CODE SD1891-03 BRANDING 1891-03 PIN CONNECTION DESCRIPTION The SD1891-03 is a 28 V silicon NPN transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Emitter 3. Base VCBO VCEO VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 45 15 3.5 1.1 8.8 +200 − 65 to +200 V V V A W °C °C THERMAL DATA RTH(j-c) March 1993 Junction-Case Thermal Resistance 20.0 °C/W 1/5 SD1891-03 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO I CBO hFE IC = 1mA IE = 1mA VCB = 24V VCE = 5V IE = 0mA IC = 0mA IE = 0mA IC = 100mA 45 3.5 — 15 — — — — — — 0.5 150 V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP ηc COB f = 1.65 GHz f = 1.65 GHz f = 1.65 GHz f = 1 MHz PIN = 200 mW PIN = 200 mW PIN = 200 mW VCB = 28 V VCE = 28 V VCE = 28 V VCE = 28 V 5.0 14 45 — — — — 2.5 — — — — W dB %...