CYStech Electronics Corp.
High Voltage NPN Triple Diffused Planar Transistor
BTC3149E3
Spec. No. : C663E3 Issued Date :...
CYStech Electronics Corp.
High Voltage
NPN Triple Diffused Planar
Transistor
BTC3149E3
Spec. No. : C663E3 Issued Date : 2012.02.13 Revised Date : Page No. : 1/6
Features
High voltage, BVCBO=1600V min., BVCEO=800V min. Pb-free lead plating package
Symbol
BTC3149E3
Outline
TO-220
B：Base C：Collector E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
Power Dissipation
Operating Junction and Storage Temperature Range
Note : *1. Single Pulse Pw≦300μs,Duty≦2%.
Symbol
VCBO VCEO VEBO IC(DC) IC(Pulse) Pd(Ta=25℃) Pd(Tc=25℃) Tj ; Tstg
Limit
1600 800 6 1.2 3 *1 2 40 -55~+150
Unit
V V V A A
W
°C
BTC3149E3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C663E3 Issued Date : 2012.02.13 Revised Date : Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCBO BVCEO BVEBO
ICBO ICEO IEBO *VCE(sat) *VCE(sat) *VBE(sat) *hFE1 *hFE2 *hFE3 Cob
tr tstg tf
Min....
