CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2883J3
BVCEO
IC
RCESAT(MAX)
Spec. No....
CYStech Electronics Corp.
General Purpose
NPN Epitaxial Planar
Transistor
BTC2883J3
BVCEO
IC
RCESAT(MAX)
Spec. No. : C239J3 Issued Date : 2010.06.23 Revised Date : 2011.03.08 Page No. : 1/6
240V 1.2A 0.6Ω
Features
High breakdown voltage, BVCEO≥ 240V Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and halogen-free package
Symbol
BTC2883J3
Outline
TO-252(DPAK)
B：Base C：Collector E：Emitter
B CE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Power Dissipation @TA=25℃
Power Dissipation @TC=25℃ Junction Temperature Storage Temperature
Symbol VCBO VCEO VEBO IC IB
PD
Tj Tstg
Limits
300 240
7 1.2 200 1
10
150 -55~+150
Unit
V V V A mA W
W
°C °C
BTC2883J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C239J3 Issued Date : 2010.06.23 Revised Date : 2011.03.08 Page No. : 2/6
The...
