CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB9435L3
Spec. No. : C809L3 Issued Date : 2009.01...
CYStech Electronics Corp.
Low Vcesat
PNP Epitaxial Planar
Transistor
BTB9435L3
Spec. No. : C809L3 Issued Date : 2009.01.16 Revised Date: Page:1/7
Features
Low VCE(sat) Excellent current gain characteristics RoHS compliant package
Symbol
BTB9435L3
B：Base C：Collector E：Emitter
Outline
SOT-223 C
E C B
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limit
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Collector Current
VCBO VCEO VEBO IC(DC) IC(pulse)
-40 -30 -6 -3 -5 (Note 1)
Power Dissipation
Pd(Ta=25℃)
1.56 (Note 2)
Thermal Resistance, junction to ambient Thermal Resistance, junction to case Junction Temperature
Pd(Tc=25℃) RθJA RθJC
Tj
3 80 42
150
Storage Temperature
Tstg -55~+150
Note : 1. Single Pulse Pw≦300μs,Duty≦2%.
2. When the collector of device is mounted on a FR-4 board with area of 1” sq(645 sq mm)
Unit V V V A A
W
°C/W
°C °C
BTB9435L3
CYStek Product Specification
CYStech Electronics Corp.
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