D560

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SD560 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD560 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC output of devices such as pulse motor drivers and relay drivers, and PC terminals. FEATURES C-to-E reverse diode inserted Low collector saturation voltage ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Conditions Ratings Unit 150 V 100 V 7.0 V Data±S5h.0eet4U.cAom PW ≤ 10 ms, duty cycle ≤ 50% ±8.0 A 0.5 A TC = 25°C 30 W TA = 25°C 1.5 W 150 °C −55...