BUK9606-55B
N-channel TrenchMOS FET
Rev. 04 — 23 July 2009
Product data sheet
1. Product profile
1.1 General descript...
BUK9606-55B
N-channel TrenchMOS FET
Rev. 04 — 23 July 2009
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
1.2 Features and benefits
Low conduction losses due to low on-state resistance
Q101 compliant
Suitable for logic level gate drive sources
Suitable for thermally demanding environments due to 175 °C rating
1.3 Applications
12 V and 24 V loads Automotive systems
General purpose power switching Motors, lamps and solenoids
1.4 Quick reference data
Table 1. Quick reference
Symbol Parameter
Conditions
Min Typ Max Unit
VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
- - 55 V
ID drain current
VGS = 5 V; Tmb = 25 °C; [1] - - 75 A see Figure 1 and 3
Ptot total power dissipation
Tmb = 25 °C; see Figur...