ADS6608A4A

A-Data Synchronous DRAM ADS6608A4A 2M x 8 Bit x 4 Banks General Description The ADS6608A4A are four-bank Synchronous DRAMs organized as 2,097,152 words x 8 bits x 4 banks. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications Features JEDEC standard LVTTL 3.3V power supply MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,4,8,& full page) -Burst Type (sequential & Interleave) 4 banks operation All inputs are sampled at the positive edge of the system clock Burst Read single write operation Auto & Self refresh 4096 refresh cycle DQM for masking Package:54-pins 400 mil TSOP-Type II Ordering Information. Part No. ADS6608A4A-75 Pin Assignment Frequency 133Mhz Inter...