2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler
ACPL-P349 and ACPL-W349
2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6
Data She...
Description
ACPL-P349 and ACPL-W349
2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6
Data Sheet
Description
The Broadcom® ACPL-P349/W349 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving SiC/GaN (Silicon Carbide/Gallium Nitride) MOSFETs and IGBTs used in power conversion applications. The high operating voltage range of the output stage provides the drive voltages required by gate controlled devices. The voltage and high peak output current supplied by this optocoupler make it ideally suited for direct driving SiC/GaN MOSFET and IGBT with ratings up to 1200V/100A.
Features
2.5-A maximum peak output current Wide operating VCC range: 15V to 30V 110-ns maximum propagation delay 50-ns maximum propagation delay difference Rail-to-rail output voltage 100 kV/µs minimum Common Mode Rejection (CMR) at
VCM = 1500V LED current input with hy...
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