Silicon Carbide Schottky Diode
1200 V, 20 A
FFSP20120A
Description Silicon Carbide (SiC) Schottky Diodes use a completel...
Silicon Carbide
Schottky Diode
1200 V, 20 A
FFSP20120A
Description Silicon Carbide (SiC)
Schottky Diodes use a completely new
technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
Max Junction Temperature 175°C Avalanche Rated 200 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery/No Forward Recovery This Device is Pb−Free, Halogen Free/BFR Free and RoHS
Compliant
Applications
General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits
www.onsemi.com
1. Cathode 2. Anode
Schottky Diode
1 2 TO−220−2LD CASE 340BB
MARKING DIAGRAM
$Y&Z&3&K FFSP 15120A
© Semiconductor Components Industries, LLC, 2016
January, 2020 − Rev. 3
$Y &Z &3 &K FFSP15120A
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1 Publication Order Number: FFSP20120A/D
FFSP20120A
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
Peak Repetitive Reverse Voltage
1...