FFSP3065A

FFSP3065A — Silicon Carbide Schottky Diode FFSP3065A Silicon Carbide Schottky Diode 650 V, 30 A Features Max Junction Temperature 175 oC Avalanche Rated 180 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits July 2016 Description SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions Absolute Maximum Ratings TC = 25 oC unless otherwise noted. Symbol Parameter VRRM EAS IF IF, Max IF,SM IF,RM Ptot TJ, TSTG Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (Note 1) Continuous Rectified Forwa...