FFSP10120A

FFSP10120A — Silicon Carbide Schottky Diode FFSP10120A Silicon Carbide Schottky Diode 1200 V, 10 A Features Max Junction Temperature 175 °C Avalanche Rated 100 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery Applications General Purpose SMPS, Solar Inverter, UPS Power Switching Circuits November 2016 Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size & cost. 1 2 TO-220-2L 1. Cathode 2. Anode 1. Cathode 2. Anode Absolute Maximum Ratings...