Features
■ Epitaxial planar die construction ■ Ideal for low power amplification and switching
MMDT3904 Dual NPN Transi...
Features
■ Epitaxial planar die construction ■ Ideal for low power amplification and switching
MMDT3904 Dual
NPN Transistor
Absolute Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
Symbol VCBO VCEO VEBO
Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
IC PC TJ Tstg
Value 60 40 5 0.2 0.2
150 -55 to +150
Unit V V V
A W ℃ ℃
Electrical Characteristics (TA = 25 °C unless otherwise noted)
Parameter
Symbol
Test Conditions
Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Noise Figure Delay Time Rise Time Storage Time Fall Time
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO ICEX hFE(1) hFE(2)...
