BC846xW/BC847xW BC848xW NPN Transistors
■ o C rrent ■ o olta e ■ eal for A tomati nsertion
1. BASE 2. EMITTER 3. COLLE...
BC846xW/BC847xW BC848xW
NPN Transistors
■ o C rrent ■ o olta e ■ eal for A tomati nsertion
1. BASE 2. EMITTER 3. COLLECTOR
3
2 1
SOT-323
Symbol VCBO
VCEO
VEBO
IC PC R ΘJA TJ TSTG
(TA=25 C nless otherwise specified)
Parameter Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current –Continuous Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
BC846W BC847W BC848W BC846W BC847W BC848W BC846W BC847W BC848W
Value 80 50 30 65 45 30 6 6 5 0.1 150
833 -55 to +150
-55 to +150
Unit V
V
V
A mW °C/W °C °C
BC846AW A BC846BW B BC847AW. BC847BW BC847CW BC848AW BC848BW BC848CW .
%&4[:%&4[:/%&4[: N31
Transistors
Electrical Characteristics (TA=25°C unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base Breakdown Voltage
BC846xW
BC847xW
VCBO IC= 10µA, IE=0
BC848xW
Collector-Emitter Breakdown Voltage
BC846xW BC847xW
VCEO IC= 10mA, IB=0
Emitter-Base...
