SBC817-25

SBC817-16/25/40 NPN General Purpose Transistors FEATURES l High Current l Low Voltage l General Purpose Switching and Amplification MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Value 45 50 5.0 500 Unit V V V mAdc Symbol PD R θJA PD R θJA T J , T stg Max Unit 225 mW 1.8 mW/°C 556 °C/W 300 2.4 417 –55 to +150 mW mW/°C °C/W °C Package: SOT-23 1 BASE 3 COLLECTOR 2 EMITTER ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted ) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA) ...