Silicon N-Channel MOSFET
MOSFETs Silicon N-channel MOS (U-MOS�-H)
SSM3K341TU
1. Applications
• Power Management Switches • DC-DC Converters
2. Fe...
Description
MOSFETs Silicon N-channel MOS (U-MOS�-H)
SSM3K341TU
1. Applications
Power Management Switches DC-DC Converters
2. Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 175 � MOSFET (3) 4.0 V drive (4) Low drain-source on-resistance
: RDS(ON) = 28 mΩ (typ.) (@VGS = 10 V) RDS(ON) = 36 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 43 mΩ (typ.) (@VGS = 4 V)
3. Packaging and Internal Circuit
SSM3K341TU
1: Gate 2: Source 3: Drain
UFM
4. Orderable part number
Orderable part number
AEC-Q101
Note
SSM3K341TU,LF SSM3K341TU,LXGF SSM3K341TU,LXHF
� YES YES
(Note 1)
General Use Unintended Use Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
©2016-2022
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2016-12
2022-03-11 Rev.10.0
SSM3K341TU
5. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
60
V
VGSS
±20
Drain current (DC)
(Note 1)
ID
6
A
Drain current (pulsed)
(Note 1), (Note 2)
IDP
24
Power dissipation
(Note 3)
PD
1.0
W
Power dissipation
(t = 10 s)
(Note 3)
PD
1.8
Single-pulse avalanche energy
(Note 4)
EAS
28.9
mJ
Avalanche current Channel temperature
IAR
(Note 5)
Tch
6
A
175
�
Storage temperature
(Note 5)
Tstg
-55 to 175
Note: Using continuously under heavy loads (e.g. the application of high temperatur...
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