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SSM3J356R

Toshiba

Silicon P-Channel MOSFET


Description
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J356R 1. Applications Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3. Packaging and Pin Assignment SSM3J356R 1:...



Toshiba

SSM3J356R

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