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SSM6J801R

Toshiba
Part Number SSM6J801R
Manufacturer Toshiba
Description Silicon P-Channel MOSFET
Published May 20, 2019
Detailed Description MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J801R 1. Applications • Power Management Switches 2. Features (1) 1.5 V gate ...
Datasheet PDF File SSM6J801R PDF File

SSM6J801R
SSM6J801R

Overview
MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J801R 1.
Applications • Power Management Switches 2.
Features (1) 1.
5 V gate drive voltage.
(2) Low drain-source on-resistance : RDS(ON) = 88.
4 mΩ (max) (@VGS = -1.
5 V) RDS(ON) = 56.
0 mΩ (max) (@VGS = -1.
8 V) RDS(ON) = 39.
7 mΩ (max) (@VGS = -2.
5 V) RDS(ON) = 32.
5 mΩ (max) (@VGS = -4.
5 V) 3.
Packaging and Pin Assignment TSOP6F SSM6J801R 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2016-12-19 Rev.
3.
0 SSM6J801R 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS -8/+6...


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