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SSM6N815R
Silicon N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS SSM6N815R 1. Applications Power Management Switches 2. Features (1) 4.0 V drive (2) Low drain-source on-resistance : RDS(ON) = 115 mΩ (typ.) (@VGS = 4.0 V) RDS(ON) = 101 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 84 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment TSOP6F SSM6N815R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5...
Toshiba
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