BCW72LT1G

BCW72LT1G, SBCW72LT1G General Purpose Transistor NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol VCEO Value 45 Unit Vdc Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCBO VEBO IC 50 Vdc 5.0 Vdc 100 mAdc Characteristic Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C Symbol PD Max 225 1.8 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ra...