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MRF21060LR3

NXP

RF Power Field Effect Transistors


Description
ARCHIVE INFORMATION ARCHIVE INFORMATION Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2100 to 2200 MHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier amplifier applications. Typical 2 - Carrier W ...



NXP

MRF21060LR3

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