AHK6030LX

AHK6030LX 30V N-Channel Power MOSFET General Description Utilizing Analogic Tech’s state-of-the-art TrenchDMOSâ process, the AHK6030LX sets a new standard in current handling capability and efficiency for surface mount power MOSFETs. Gate charge and RDS(ON) have been optimized and package inductance minimized to provide high efficiency for DC-DC. Features = = = = = PWMSwitch TM VDS(MAX) = 30V ID(MAX)(a) = 52 A @ 25°C IAPP(MAX) = 20A in typical computer application Low Gate Charge Low RDS(ON): 10.5 mΩ=(max), 9.5 mΩ=(typ)@VGS = 10V 18 mΩ= (max), 14 mΩ=(typ)@ VGS = 4.5V Applications = DC-DC converters for CPU’s = High Current Load Switch DPAK-L Package Drain-Connected Tab DPAK Package Preliminary Information Drain-Connected Tab G S G S Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, TSTG Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150°C (a) Pulsed Drain Current (a) Continuous Source Current (Source-Drain Diode) (a) Maximum Power Dissipation (a) Operating Junction and Storage Temperature Range TA = 25°C TA = 70°C Value 30 ±20 ±52 ±56 23 42 27 -55 to 150 Units V A W °C Thermal Resistance RθJA RθJC Maximum Junction-to-Ambient (a) Maximum Junction-to-Case(a) 96 3.6 °C/W °C/W Advanced Analogic Technologies, Inc. 1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086 (408)524-9684 Fax (408)524-9689 9-19 6030LX.2001.05.0.91 AHK6030LX 30V N-Channel Power MOSFET Electrical Characte...