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AFM08P2-000 Dataheets PDF



Part Number AFM08P2-000
Manufacturers Alpha Industries
Logo Alpha Industries
Description Power GaAs MESFET
Datasheet AFM08P2-000 DatasheetAFM08P2-000 Datasheet (PDF)

Ka Band Power GaAs MESFET Chip AFM08P2-000 Features s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm s High Associated Gain, 8.5 dB @ 18 GHz Gate 0.327 mm 0.655 mm 0.110 mm Description The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 8.

  AFM08P2-000   AFM08P2-000



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Ka Band Power GaAs MESFET Chip AFM08P2-000 Features s 24 dBm Output Power @ 18 GHz s High Power Added Efficiency, 20% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding Chip thickness = 0.1 mm. Drain 0.110 mm 0.395 mm s High Associated Gain, 8.5 dB @ 18 GHz Gate 0.327 mm 0.655 mm 0.110 mm Description The AFM08P2-000 is a high performance power GaAs MESFET chip having a gate length of 0.25 µm and a total gate periphery of 800 µm. The device has excellent gain and power performance through 40 GHz, making it suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. It employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Through-substrate via holes are incorporated into the chip to facilitate low inductance grounding of the source for improved high frequency and high gain performance. Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 2 mA 1.4 W -65 to +150°C 175°C Electrical Specifications at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) Thermal Resistance (ΘJC) TBASE = 25°C VDS = 5 V, IDS = 140 mA, F = 30 GHz VDS = 5 V, IDS = 140 mA, F = 18 GHz Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 2.0 mA IGD = 800 µA Min. 175.0 120.0 1.0 8.0 Typ. 265.0 160.0 3.0 12.0 24.0 8.5 20.0 23.0 4.5 10.0 120.0 5.0 Max. 360.0 Unit mA mS -V -V dBm dB % dBm dB % °C/W Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A 1 Ka Band Power GaAs MESFET Chip AFM08P2-000 Typical Performance Data Total Power Dissipation PT (W) 300 240 VGS = 0 V -0.5 V 1.50 1.25 1.00 0.75 0.50 0.25 0 0 50 100 150 200 lDS (mA) 180 -1.0 V 120 -1.5 V 60 0 0 1 2 3 4 5 -2.0 V -2.5 V VDS (V) TBASE (˚C) I-V Power Derating 2 Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A Ka Band Power GaAs MESFET Chip AFM08P2-000 Typical S-Parameters (VDS = 5 V, IDS = 140 mA) Freq. (GHz) 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 S11 Mag. 0.922 0.886 0.858 0.846 0.833 0.830 0.827 0.826 0.826 0.826 0.826 0.826 0.827 0.827 0.828 0.827 0.830 0.833 0.834 0.833 0.826 0.824 0.837 0.841 0.851 0.861 0.869 0.873 0.876 0.878 0.879 0.875 0.875 0.873 0.870 0.869 0.866 0.865 0.859 Ang. -60.551 -83..



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