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AFM06P3-213 Dataheets PDF



Part Number AFM06P3-213
Manufacturers Alpha Industries
Logo Alpha Industries
Description Power GaAs MESFET
Datasheet AFM06P3-213 DatasheetAFM06P3-213 Datasheet (PDF)

Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Source 212 Gate Drain Source Gate Source Drain 213 Source Description The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600.

  AFM06P3-213   AFM06P3-213



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Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Features s 22 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–18 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface Source 212 Gate Drain Source Gate Source Drain 213 Source Description The AFM06P3-212, 213 are high performance power GaAs MESFET chips in an industry standard ceramic micro-x package, having a gate length of 0.25 µm and a total gate periphery of 600 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They employ Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 1 mA 1.1 W -65 to +150°C 175°C Electrical Specifications at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-Off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) Test Conditions VDS = 2 V, VGS = 0 V VDS = 5 V, IDS = 1.5 mA IGD = 600 µA Min. 130.0 90.0 1.0 8.0 Typ. 200.0 120.0 3.0 12.0 22.0 VDS = 5 V, IDS = 70 mA, F = 18 GHz 9.0 23.0 5.0 Max. 270.0 Unit mA mS V V dBm dB % Alpha Industries, Inc. [781] 935-5150 • Fax [617] 824-4579 • Email [email protected] • www.alphaind.com Specifications subject to change without notice. 6/99A 1 Ka Band Power GaAs MESFET Chips AFM06P3-212, AFM06P3-213 Typical Performance Data VGS = 0 V 120 -0.5 V Total Power Dissipation PT (W) 150 1.50 1.25 1.00 0.75 0.50 0.25 0 0 50 100 150 200 lDS (mA) 90 60 30 0 0 1 2 3 -1.0 V -1.5 V -2.0 V -2.5 V 4 5 VDS (V) TBASE (˚C) I-V Power Derating Typical S-Parameters (VDS = 5 V, IDS = 100 mA) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 Mag. 0.827 0.841 0.776 0.773 0.772 0.729 0.652 0.680 0.720 0.666 0.631 0.644 0.657 0.748 0.847 0.850 0.805 0.847 0.831 0.791 0.866 0.836 0.853 0.958 0.844 0.733 Ang. -37.8264 -71.7158 -95.9016 -116.1009 -136.3639 -159.5267 177.0366 154.3013 135.1126 117.7185 100.5973 76.8920 64.6829 52.4407 37.8038 22.3398 8.2106 -2.1121 -5.6214 -6.5681 -20.5483 -35.5536 -52.6197 -69.2200 -81.7547 -104.6242 Mag. 7.3390 6.0499 5.0784 4.4165 4.0687 3.6170 3.3407 3.1085 2.8509 2.6700 2.3131 2.0077 1.9441 1.8819 1.7404 1.5849 1.4012 1.2311 1.1617 1.0774 1.1110 1.1102 1.0759 1.0823 1.0406 0.9783 S21 Ang. 153.0160 122.7182 98.6981 83.7214 61.0411 42.4229 26.8719 11.1292 -1.4693 -17.9531 -33.8962 -49.6463 -62.8550 -81.2585 -98.7912 -114.6893 -126.9353 -137.7326 -149.0193 -161.2119 -177.5857 164.5367 146.8712 131.6291 112.8443 88.5591 Mag. 0.0202 0.0340 0.0423 0.0496 0.0574 0.062.


AFM06P3-212 AFM06P3-213 AFM08P2-000


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