Ka Band Power GaAs MESFET Chip
AFM06P2-000 Features
s 22.5 dBm Output Power @ 18 GHz s High Associated Gain, 9 dB @ 18 GHz s High Power Added Efficiency, 23% s Broadband Operation, DC–40 GHz s 0.25 µm Ti/Pd/Au Gates s Passivated Surface s Through-Substrate Via Hole Grounding
0.327 mm 0.655 mm
Chip thickness = 0.1 mm.
Drain 0.395 mm
0.110 mm
Gate
0.110 mm...
