AFM04P3-212

Low Noise/Medium Power GaAs MESFET Chips AFM04P3-212, AFM04P3-213 Features s Low Noise Figure, 0.6 dB @ 4 GHz s 20 dBm Output Power @ 18 GHz s High Associated Gain, 13 dB @ 4 GHz s High Power Added Efficiency, 25% s Broadband Operation, DC–26 GHz s Available in Tape and Reel Packaging Source 212 Gate Drain Source Gate Source Drain 213 Source Description The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 µm and a total gate periphery of 400 µm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits. They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design. The AFM04P3 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part. Absolute Maximum Ratings Characteristic Drain to Source Voltage (VDS) Gate to Source Voltage (VGS) Drain Current (IDS) Gate Current (IGS) Total Power Dissipation (PT) Storage Temperature (TST) Channel Temperature (TCH) Value 6V -4 V IDSS 1 mA 700 mW -65 to +150°C 175°C Electrical Specifications at 25°C Parameter Saturated Drain Current (IDSS) Transconductance (gm) Pinch-Off Voltage (VP) Gate to Drain Breakdown Voltage (Vbgd) Noise Figure (NF) Associated Gain (GA) Output Power at 1 dB Compression (P1 dB) Gain at 1 dB Compression (G1 dB) Power Added Efficiency (ηadd) Test Conditions VD...