STPSC8H065-Y
Datasheet
Automotive 650 V, 8 A high surge silicon carbide power Schottky diode
AK
K
A A
NC
D²PAK HV
K
K...
STPSC8H065-Y
Datasheet
Automotive 650 V, 8 A high surge silicon carbide power
Schottky diode
AK
K
A A
NC
D²PAK HV
K
KA NC
DPAK
Product label
Product status STPSC8H065-Y
Product summary
Symbol
Value
IF(AV)
8A
VRRM
650 V
Tj(max.)
175 °C
Features
AEC-Q101 qualified No reverse recovery charge in application current range Switching behavior independent of temperature Recommended to PFC applications PPAP capable VRRM guaranteed from -40 to 175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. (with top
coating) ECOPACK®2 compliant component
Applications
On board charger
Description
The SiC diode is an ultra-high performance power
Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a
Schottky diode structure with a 650 V rating. Due to the
Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-...
