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FCP067N65S3

Part Number	FCP067N65S3
Manufacturer	ON Semiconductor
Description	Power MOSFET
Features	• 700 V @ TJ = 150°C • Typ. RDS(on) = 59 mW • Ultra Low Gate Charge (Typ. Qg = 78 nC) • Low Effective Output Capacitance...
Published	May 9, 2019
Datasheet	FCP067N65S3 PDF File

Features

• 700 V @ TJ = 150°C
• Typ. RDS(on) = 59 mW
• Ultra Low Gate Charge (Typ. Qg = 78 nC)
• Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
• 100% Avalanche Tested
• These Devices are Pb−Free and are RoHS Compliant Applications
• Telecom / Se...

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