Document
FCU600N65S3R0
MOSFET – Power, N-Channel, SUPERFET III, Easy Drive
650 V, 6 A, 600 mW
Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation.
Features
• 700 V @ TJ = 150°C • Typ. RDS(on) = 493 mW • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF) • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Computing / Display Power Supplies • Telecom / Server Power Supplies • Industrial Power Supplies • Lighting / Charger / Adapter
www.onsemi.com
VDSS 650 V
RDS(ON) MAX 600 mW @ 10 V
ID MAX 6A
D
G
S N-Channel MOSFET
GDS I−PAK
(DPAK3 STRAIGHT LEADS) CASE 369AP
MARKING DIAGRAM
$Y&Z&3&K FCU600 N65S3R0
© Semiconductor Components Industries, LLC, 2017
August, 2019 − Rev. 4
$Y &Z &3 &K FCU600N65S3R0
= ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
1
Publication Order Number:
FCU600N65S3R0/D
FCU600N65S3R0
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
Value
Unit
VDSS VGSS
Drain to Source Voltage Gate to Source Voltage
DC AC (f > 1 Hz)
650
V
±30
V
±30
V
ID
Drain Current
Continuous (TC = 25°C)
6
Continuous (TC = 100°C)
3.8
IDM
Drain Current
Pulsed (Note 1)
15
EAS
Single Pulsed Avalanche Energy (Note 2)
24
IAS
Avalanche Current (Note 2)
1.6
EAR
Repetitive Avalanche Energy (Note 1)
0.54
dv/dt
MOSFET dv/dt
100
A
A mJ A mJ V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C) Derate Above 25°C
54
W
0.43
W/°C
TJ, TSTG Operating and Storage Temperature Range
−55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.6 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 3 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC RqJA
Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max.
Value 2.3 100
Unit _C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
FCU600N65S3R0
FCU600N65S3R0
Package
I−PAK (DPAK3 STRAIGHT LEADS)
(Pb−Free / Halogen Free)
Shipping (Qty / Packing) 75 Units / Tube
www.onsemi.com 2
FCU600N65S3R0
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
OFF CHARACTERISTICS
BVDSS
Drain to Source Breakdown Voltage
DBVDSS/DTJ Breakdown Voltage Temperature Coefficient
VGS = 0 V, ID = 1 mA, TJ = 25_C VGS = 0 V, ID = 1 mA, TJ = 150_C ID = 1 mA, Referenced to 25_C
650
−
−
V
700
−
−
V
−
0.66
−
V/_C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ON CHARACTERISTICS
VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V
−
−
1
mA
−
0.3
−
−
−
±100
nA
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
VGS = VDS, ID = 0.12 mA VGS = 10 V, ID = 3 A VDS = 20 V, ID = 3 A
2.5
−
4.5
V
−
493
600
mW
−
3.6
−
S
Ciss Coss Coss(eff.) Coss(er.) Qg(tot) Qgs Qgd ESR
Input Capacitance Output Capacitance Effective Output Capacitance Energy Related Output Capacitance Total Gate Charge at 10 V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance
VDS = 400 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 400 V, VGS = 0 V VDS = 0 V to 400 V, VGS = 0 V VDS = 400 V, ID = 3 A, VGS = 10 V (Note 4)
f = 1 MHz
−
465
−
pF
−
10
−
pF
−
127
−
pF
−
17
−
pF
−
11
−
nC
−
3
−
nC
−
4.9
−
nC
−
0.9
−
W
SWITCHING CHARACTERISTICS
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
SOURCE-DRAIN DIODE CHARACTERISTICS
VDD = 400 V, ID = 3 A, VGS = 10 V, Rg = 4.7 W (Note 4)
−
11
−
ns
−
9
−
ns
−
29
−
ns
−
14
−
ns
IS
Maximum Continuous Source to Drain Diode Forward Current
ISM
Maximum Pulsed Source to Drain Diode Forward Current
VSD
Source to Drain D.