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FCU600N65S3R0 Dataheets PDF



Part Number FCU600N65S3R0
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description N-Channel Power MOSFET
Datasheet FCU600N65S3R0 DatasheetFCU600N65S3R0 Datasheet (PDF)

FCU600N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series.

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FCU600N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 6 A, 600 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 493 mW • Ultra Low Gate Charge (Typ. Qg = 11 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 127 pF) • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Computing / Display Power Supplies • Telecom / Server Power Supplies • Industrial Power Supplies • Lighting / Charger / Adapter www.onsemi.com VDSS 650 V RDS(ON) MAX 600 mW @ 10 V ID MAX 6A D G S N-Channel MOSFET GDS I−PAK (DPAK3 STRAIGHT LEADS) CASE 369AP MARKING DIAGRAM $Y&Z&3&K FCU600 N65S3R0 © Semiconductor Components Industries, LLC, 2017 August, 2019 − Rev. 4 $Y &Z &3 &K FCU600N65S3R0 = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. 1 Publication Order Number: FCU600N65S3R0/D FCU600N65S3R0 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified) Symbol Parameter Value Unit VDSS VGSS Drain to Source Voltage Gate to Source Voltage DC AC (f > 1 Hz) 650 V ±30 V ±30 V ID Drain Current Continuous (TC = 25°C) 6 Continuous (TC = 100°C) 3.8 IDM Drain Current Pulsed (Note 1) 15 EAS Single Pulsed Avalanche Energy (Note 2) 24 IAS Avalanche Current (Note 2) 1.6 EAR Repetitive Avalanche Energy (Note 1) 0.54 dv/dt MOSFET dv/dt 100 A A mJ A mJ V/ns Peak Diode Recovery dv/dt (Note 3) 20 PD Power Dissipation (TC = 25°C) Derate Above 25°C 54 W 0.43 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C TL Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 s 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse-width limited by maximum junction temperature. 2. IAS = 1.6 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 3 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC RqJA Thermal Resistance, Junction to Case, Max. Thermal Resistance, Junction to Ambient, Max. Value 2.3 100 Unit _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking FCU600N65S3R0 FCU600N65S3R0 Package I−PAK (DPAK3 STRAIGHT LEADS) (Pb−Free / Halogen Free) Shipping (Qty / Packing) 75 Units / Tube www.onsemi.com 2 FCU600N65S3R0 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Parameter Test Conditions Min Typ Max Unit OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS/DTJ Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 1 mA, TJ = 25_C VGS = 0 V, ID = 1 mA, TJ = 150_C ID = 1 mA, Referenced to 25_C 650 − − V 700 − − V − 0.66 − V/_C IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ON CHARACTERISTICS VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125_C VGS = ±30 V, VDS = 0 V − − 1 mA − 0.3 − − − ±100 nA VGS(th) Gate Threshold Voltage RDS(on) Static Drain to Source On Resistance gFS Forward Transconductance DYNAMIC CHARACTERISTICS VGS = VDS, ID = 0.12 mA VGS = 10 V, ID = 3 A VDS = 20 V, ID = 3 A 2.5 − 4.5 V − 493 600 mW − 3.6 − S Ciss Coss Coss(eff.) Coss(er.) Qg(tot) Qgs Qgd ESR Input Capacitance Output Capacitance Effective Output Capacitance Energy Related Output Capacitance Total Gate Charge at 10 V Gate to Source Gate Charge Gate to Drain “Miller” Charge Equivalent Series Resistance VDS = 400 V, VGS = 0 V, f = 1 MHz VDS = 0 V to 400 V, VGS = 0 V VDS = 0 V to 400 V, VGS = 0 V VDS = 400 V, ID = 3 A, VGS = 10 V (Note 4) f = 1 MHz − 465 − pF − 10 − pF − 127 − pF − 17 − pF − 11 − nC − 3 − nC − 4.9 − nC − 0.9 − W SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time SOURCE-DRAIN DIODE CHARACTERISTICS VDD = 400 V, ID = 3 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 11 − ns − 9 − ns − 29 − ns − 14 − ns IS Maximum Continuous Source to Drain Diode Forward Current ISM Maximum Pulsed Source to Drain Diode Forward Current VSD Source to Drain D.


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