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SSM6K513NU

Toshiba

Silicon N-Channel MOSFET


Description
MOSFETs Silicon N-channel MOS (U-MOS-H) SSM6K513NU 1. Applications Power Management Switches 2. Features (1) 4.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 8.0 mΩ (typ.) (@VGS = 4.5 V) RDS(ON) = 6.5 mΩ (typ.) (@VGS = 10 V) 3. Packaging and Pin Assignment UDFN6B SSM6K513NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016-2018 Toshiba Electronic Devi...



Toshiba

SSM6K513NU

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