Document
IGBT/SiC Diode Co-pack
Features
•Optimal Punch Through (OPT) technology •SiC freewheeling diode • Positive temperature coefficient for easy paralleling •Extremely fast switching speeds • Temperature independent switching behavior of SiC rectifier • Best RBSOA/SCSOA capability in the industry • High junction temperature • Industry standard packaging
Package
•RoHS Compliant
GA35XCP12-247
VCES
= 1200 V
I
CM
= 35 A
VCE(SAT) = 3.0 V
2
1
Advantages
•Industry's highest switching speeds •High temperature operation • Improved circuit efficiency •Low switching losses
1 2
3
TO – 247AB
Applications
•Solar Inverters • Aerospace Actuators •Server Power Supplies •Resonant Inverters > 100 kHz • Inductive Heating • Electronic Welders
3
Maximum Ratings, at Tj = 150 °C, unless otherwise specified
Parameter
Symbol
Conditions
IGBT Collector-Emitter Voltage DC-Collector Current Gate Emitter Peak Voltage Operating Temperature Storage Temp.