Silicon Standard Recovery Diode
Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 800 V to 1200 V VRRM • Not ESD Sensitive
N...
Description
Silicon Standard Recovery Diode
Features High Surge Capability Types from 800 V to 1200 V VRRM Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
S70K thru S70QR
VRRM = 800 V - 1200 V IF = 70 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
S70K (R)
S70M (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
VRRM VRMS VDC
IF
IF,SM
Tj Tstg
TC ≤ 140 °C TC = 25 °C, tp = 8.3 ms
800 560 800 70
1250
-55 to 150 -55 to 150
1000 700 1000 70
1250
-55 to 150 -55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
S70K (R)
Diode forward voltage
Reverse current
Thermal characteristics Thermal resistance, junction case...
Similar Datasheet