High Temperature Silicon Carbide Power Schottky Diode
Features
100 V Schottky rectifier 210 °C maximum operating t...
High Temperature Silicon Carbide Power
Schottky Diode
Features
100 V
Schottky rectifier 210 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability Positive temperature coefficient of VF Temperature independent switching behavior Lowest figure of merit QC/IF Available screened to Mil-PRF-19500
Package
RoHS Compliant
GB02SHT01-46
VRRM IF (Tc=25°C) QC
= 100 V = 4A = 9 nC
2 1
TO – 46
Advantages
High temperature operation Improved circuit efficiency (Lower overall cost) Low switching losses Ease of paralleling devices without thermal runaway Smaller heat sink requirements Industry’s lowest reverse recovery charge Industry’s lowest device capacitance Ideal for output switching of power supplies Best in class reverse leakage current at operating
temperature
Applications
Down Hole Oil Drilling Geothermal Instrumentation Solenoid Actuators General...